http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5403 -2.6a , -30v , r ds(on) 115 m ? p-channel enhancement mode mosfet elektronische bauelemente 17-sep-2012 rev. a page 1 of 4 top view a l c b d g h j f k e 1 2 3 1 2 3 s c - 59 rohs compliant product a suffix of -c specifies halogen and lead-free description the SMG5403 uses advanced trench technology to provide excellent on-resistance with low gate chang e. the device is suitable for use as a load switch or in pwm applications. features lower gate threshold voltage small package outline marking 5403 package information package mpq leader size sc-59 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v continuous drain current 3 t a =25c i d -2.6 a t a =70c -2.2 pulsed drain current 1 i dm -10 a power dissipation t a =25c p d 1.38 w linear derating factor 0.01 w / c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 3 r ja 90 c / w ref. millimeter ref. millimeter min. max. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 1 2 3
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5403 -2.6a , -30v , r ds(on) 115 m ? p-channel enhancement mode mosfet elektronische bauelemente 17-sep-2012 rev. a page 2 of 4 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -30 - - v v gs =0, i d = -250 a gate-threshold voltage v gs(th) -0.5 - -1.4 v v ds =v gs , i d = -250 a forward transconductance g fs - 5 - s v ds = -5v, , i d = -2.5a gate-body leakage current i gss - - 100 na v gs = 12v drain-source leakage current t j =25c i dss - - -1 a v ds = -30v, v gs =0 t j =70c - - -25 v ds = -24v, v gs =0 drain-source on-resistance 2 r ds(on) - - 115 m v gs = -10v, i d = -2.6a - - 150 v gs = -4.5v, i d = -2a - - 200 v gs = -2.5v, i d = -1a total gate charge 2 q g - 4.5 - nc v ds = -15v, v gs = -4.5v, i d = -2.5a gate-source charge q gs - 0.8 - gate-drain charge q gd - 1.34 - turn-on delay time 2 t d(on) - 5.4 - ns v ds = -15v, v gs = -10v, r g =3.3 , r d =4.6 , i d = -1a rise time t r - 4.6 - turn-off delay time t d(off) - 31 - fall time t f - 8 - input capacitance c iss - 415 - pf v gs =0 v ds = -25v, f=1.0mhz output capacitance c oss - 55 - reverse transfer capacitance c rss - 42 - source-drain diode diode forward voltage 2 v sd - - -1.2 v i s = -1.2a, v gs =0 reverse recovery time t rr - 16.2 - ns i s = -2.5a, v gs =0 dl/dt=100a/ s reverse recovery charge q rr - 9 - nc notes: 1. pulse width limited by max. junction temperatur e. 2. pulse width Q 300 s, duty cycle Q 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 270 c / w when mounted on min. copper pad.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5403 -2.6a , -30v , r ds(on) 115 m ? p-channel enhancement mode mosfet elektronische bauelemente 17-sep-2012 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5403 -2.6a , -30v , r ds(on) 115 m ? p-channel enhancement mode mosfet elektronische bauelemente 17-sep-2012 rev. a page 4 of 4 characteristic curves
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